Distinguishing the Charge Trapping Centers in CaF2-Based 2D Material MOSFETs
Author(s): Zhao, Z (Zhao, Zhe); Xiong, T (Xiong, Tao); Gong, J (Gong, Jian); Liu, YY (Liu, Yue-Yang)
Source: NANOMATERIALS Volume: 14 ?Issue: 12 ?Article Number: 1038 ?DOI: 10.3390/nano14121038 ?Published Date: 2024 JUN ?
Abstract: Crystalline calcium fluoride (CaF2) is drawing significant attention due to its great potential of being the gate dielectric of two-dimensional (2D) material MOSFETs. It is deemed to be superior to boron nitride and traditional silicon dioxide (SiO2) because of its larger dielectric constant, wider band gap, and lower defect density. Nevertheless, the CaF2-based MOSFETs fabricated in the experiment still present notable reliability issues, and the underlying reason remains unclear. Here, we studied the various intrinsic defects and adsorbates in CaF2/molybdenum disulfide (MoS2) and CaF2/molybdenum disilicon tetranitride (MoSi2N4) interface systems to reveal the most active charge-trapping centers in CaF2-based 2D material MOSFETs. An elaborate Table comparing the importance of different defects in both n-type and p-type devices is provided. Most impressively, the oxygen molecules (O-2) adsorbed at the interface or surface, which are inevitable in experiments, are as active as the intrinsic defects in channel materials, and they can even change the MoSi2N4 to p-type spontaneously. These results mean that it is necessary to develop a high-vacuum packaging process, as well as prepare high-quality 2D materials for better device performance.
